light emitting diodes and solar cells has broad prospects

Molybdenite industry will take some time, driven by demand for molybdenum limited
Unlike zero bandgap of graphene, molybdenite with 1.8 eV (electron-volts) energy gap between the GaAs (bandgap 1.4 eV) and GaN (bandgap 3.4 eV) between Therefore the use of that material can be fabricated simultaneously with electronic and optical function of the chip Molybdenite is the good performance of the next generation of semiconductor materials in the manufacture of ultra-small transistors, light emitting diodes and solar cells has broad prospects, but the technology is still in the laboratory stage, from industrialization and the distance from the future, if to large-scale application of the technology, you can significantly improve the contribution of global molybdenum metal structure.  The current global molybdenum consumption is about 210,000 tons, the current global electronic-grade photovoltaic grade silicon with an annual demand of about 200,000 tons, of which 50% is replaced assume, then Molybdenum tube consumption will add 105,000 tons / year , accounting for the current 50% of molybdenum consumption, which will significantly improve the industry's global supply and demand structure of molybdenum. But now, molybdenite applications in semiconductor materials, driven by demand for molybdenum Ltd.