Molybdenum disulfide material is expected to be brought into the atomic -level semiconductor technology

Sohu North Carolina State University researchers said recently that they have developed atomic -level manufacture of high quality semiconductor thin film ( film thickness of only a single atom diameter ) of new technology.  Assistant professor of materials science and engineering Caolin You ( transliteration ) said that the new technology can reduce the size of the existing semiconductor technology to the atomic level , including lasers, light emitting diodes and computer chips. Researchers studied the material is molybdenum sulfide , which is an inexpensive semiconductor materials, electronic and optical properties of the semiconductor industry with the current materials used for similar . However , molybdenum disulfide and other semiconductor materials are different and because it is formed as a single atom monolayer layered growth , while the film without losing the original material properties.
In the new technique, the researchers sulfur and molybdenum chloride powder placed in the furnace and the temperature gradually raised to 850 degrees Celsius , then the two powders appear evaporation ( vaporization ) and the occurrence of a chemical reaction to form molybdenum sulfide . To maintain high molybdenum sulfide can be deposited on the substrate , forming a thin film of molybdenum sulfide . Caolin You said the key to their success is to find a new growth mechanism of Molybdenum crucible disulfide , namely self-limiting growth by controlling the pressure and the vapor pressure high-temperature furnace carved to precisely control the thickness of the layer of molybdenum sulfide .
Suspended in the air divider represents the atoms or molecules aggregate into a solid precipitated on the substrate trends ; vapor pressure represents a solid substrate vaporized atoms or molecules into the air trend.  Is obtained on the substrate layer , molybdenum sulfide vapor partial pressure must be above ; partial pressure is higher, in the end portion of the deposited layer of the more molybdenum sulfide .  If the partial pressure is higher than in the single-layer film formed on the substrate in vapor pressure , but lower than the vapor pressure of the formation of two-layer film , then the partial pressure and vapor pressure to ensure that this balance between the molybdenum sulfide in a single layer film formation after the film growth stops automatically ceased to multilayer development .  This is the " self-limiting growth of the film ."