A nonlinear optical crystal and its application

The invention discloses a nonlinear optical crystal and its application. The object of the present invention is to provide a novel nonlinear optical crystal compound, which is easier to obtain a large size single crystal. The present invention provides a nonlinear optical crystal of cadmium zinc borate compound having the formula (CdxZn6x) B4O12, wherein, X is an integer of 15. The space group of the compound R3c; unit cell parameters a = b = 8.3867?, C = 12.2796?, Α = β = 90 °, γ = 120 °; unit cell volume V = 747.99? 3; Z = 3. Crystal density D = 4.692mg/m3. The present invention is a nonlinear optical crystal of cadmium zinc borate conducting laser wavelength conversion, wavelength conversion laser device, the optical parametric amplifiers and optical parts, electro-optical modulator, the optical waveguide device can be widely applied.
578700240006 magnesium aluminate spinel crystal growth method
Summary of an aluminum magnesium spinel crystal growth method, wherein the temperature gradient in the vertical Tungsten wire gradient furnace grown MgAl2O4 crystal, the process comprising: Green luxuriant? Top benches Nao Ah Р Xie Shen Pai the Fan ㄏ mirage Ah В words? 1 + x): 1 ratio of the high purity Al2O3 powder MgCO3 and mechanical mixing in a blender; forming a nip briquetting machine, directly into the crucible, the crucible with crucible lid sealed and placed in a furnace temperature gradient ; side evacuated heated to 600 ℃, filled with argon gas; continued heating to the melt temperature of about 2130 ℃, temperature 1-3 hours to 510 ℃ / h rate of cooling, until the crystal growth is completed, the slow cooling to room temperature , open oven hood, remove the crystals. The present invention avoids an oxidizing atmosphere furnace and the heat insulation material for the oxidation of pollution, but also to overcome the melt composition as a reducing atmosphere of the evaporation problem that can grow large (≥ φ3 inches) MgAl2O4 crystal substrate, the crystal quality significantly improved to meet GaNInN based blue semiconductor device manufacturing market demand.
578 701 180 007 to elemental powder deoxidizer thallium doped cesium iodide crystal technique
Abstract The present invention is pure carbon, silicon or germanium elemental powder deoxidizer, and CsI polycrystalline powder or CsI (Tl) broken crystal block as the growth of raw materials, drying and mixing evenly, sealed in platinum or quartz crucible. Crystal growth using the Bridgman method. A decline in a specially designed drive system, the rate of decline of the crucible control 0.43.4mm / h. Growth interface temperature gradient is 2040 ℃ / mm. The invention is achieved in the non-vacuum conditions in the growth of high transparency and high light output CsI (Tl) crystal effect, belonging to crystal growth technology.
578701410008 one kind of method for preparing aluminum borate whisker
The invention relates to a method for preparing aluminum borate whiskers. One kinds of preparation of the aluminum borate whiskers, prepared by solid-state reaction of aluminum borate whiskers, characterized in that: the use NH4Al (SO4) 2? 12H2O and NH4HCO3, as raw materials of Al2O3 precursor, the precursor is coated with such a TiB2 nano surface to form composite particles; in the heating process, the nano-TiB2 B is oxidized to B2O3, B2O3 such small particles, was amorphous, highly active, and is adsorbed on the floc Al2O3 precursor body; with the heating temperature at 1000 ℃ ~ 1200 ℃ composite particles grow gradually aluminum borate whisker. The present invention is 1000 ℃ ~ 1200 ℃ at a low temperature, obtained by solid phase reaction of aluminum borate whisker