Tungsten Enterprise

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578701510001 a high Tungsten wire crystal annealing device
The invention is a crystal field of heat treatment, a high temperature anneal crystal device, comprising placed with a vacuum exhaust port on the chassis, and through the vacuum seal sealing contact with the chassis with the inlet and outlet and barometer bell, bell body including side shield cylinder and located on the lower heat shield insulation shielding means, a gas valve on the bell body and the outlet valve; placed on both sides of the inner side of the heat shield tube tungsten Rod made, the heating element is fastened to the Mo electrode tab through the electrode plate; molybdenum electrode plate bracket supported by the alumina insulating ring, both ends of the electrode rod is fastened to the water; molybdenum electrode plate surrounded by the heat generator side space, a crystal annealing chamber; Molybdenum electrode plate beneath corundum insulating ring bracket inside a heat shield. The present invention can greatly improve the titanium-doped sapphire laser crystals quality factor FOM value and improve the high-temperature oxide crystals of optical quality.
578700200002 spherical cap shaped crystals grown using modular crucible
Summary of a growth spherical cap-shaped crystals modular crucible by an external crucible inside the crucible and the crucible cone consists of: the outside of the crucible bottom of a seed trough, which seed trough with a smooth curved transition to the half spherical arc phase, on top of the crucible with a certain width and depth of the three longitudinal grooves in the longitudinal grooves have the same width on the lower transverse grooves; the top of the crucible inside and outside the crucible is provided with three longitudinal grooves corresponding to the three equal to the distance between the transverse and negative tolerance with fixed block, hemispherical arc above the crucible inside a three phase by 120 ° tilt downward flow channel; the crucible to the top of the cone inside the cone, is under cone base diameter equal to the diameter of the cylinder, and a certain thickness, the following cylinder is a cylinder of small diameter, the height of the crucible inner cone, the cone base just inside the flow channel opening in the inner wall of the crucible bottom along flush.
578 700 090 003 with a high growth rate, a low defect density silicon preparation method
The present invention relates to a method for growing a silicon single crystal ingot, the single crystal silicon ingot includes a substantially agglomerated intrinsic point defects axially symmetric region. Said method comprising (i) a constant diameter portion which is formed inside a vacancy intrinsic point defects is the primary area; (ii) heating the lateral surface of the ingot from the silicon interstitial atoms from the heated surface to the inside heat flow induced in the area, thus reducing the concentration of vacancies in the region; and (iii) make the area above the temperature TA under the insulation, and the region is formed in the region between the vacancy concentration reduces this time, occurs at a temperature TA agglomerated vacancy point defect agglomerates defects.
578701990004 preparation of calcium sulfate whisker
Abstract The present invention is a method for preparing calcium sulfate whisker, the production of gypsum (CaSO4? 2H2O) and water as raw materials, raw material preparation, the synthesis reaction, dehydration and drying, and other items impurity purification step, characterized in that the selected The effective content of raw gypsum than 95, more than 90% of whiteness, and tap water mixed to obtain gypsum slurry, after full emulsified, added to the reactor and allowed to react, and then proceeds to the subsequent step. The use of the method of production of calcium sulfate whisker product performance, low cost, can be widely used in various industries, and has broad market prospects.