2013年7月31日星期三

Rapid thermal annealing method


The invention relates to a rapid thermal annealing molybdenum plating of the process is the rapid thermal annealing apparatus of the wafer for the first rapid thermal annealing step, and to monitor a process parameter, the process determines whether the measured value is outside the parameter a The first range of process parameters, wherein the first range of process parameters for the first rapid thermal annealing process is carried out in the normal process parameter plus or minus a first predetermined value, followed by a second rapid thermal annealing step, and to monitor the process parameters, process parameters determine whether the measured value exceeds a second range of process parameters, wherein the second process parameter range is plus or minus one process parameter for this second predetermined value, and the first process parameter ranges greater than the second process parameter ranges. The invention process can be in the rapid thermal annealing step of the initial detects the rapid thermal annealing process of process stability; and to the heat annealing process is unstable, the rapid thermal annealing step of the initial stop rapid thermal annealing process, which may prevent wafer scrap.
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